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Same model may have multiple batches, images only for reference.
IPU06N03LZG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPU06N03LZG

Part No IPU06N03LZG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™2
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2783 pF @ 15 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-21
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1033855-IPU06N03LZG
Ultra Librarian 3D Model Ultra Librarian IPU06N03LZG CAD Model

Description

The OptiMOS™2 MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is a high-performance N-Channel FET designed for various applications in the field of discrete semiconductor products manufactured by Infineon Technologies.

  • Vdss: 25V
  • Id: 50A @ 25°C
  • Rds On (Max): 5.1mOhm @ 30A and 10V
  • Qg: 22nC @ 5V
  • Mounting Type: Through-hole
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature: -55°C to 175°C

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