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Same model may have multiple batches, images only for reference.
IPU13N03LAG Real Image
Same model may have multiple batches, images only for reference.

IPU13N03LAG

Part No IPU13N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A TO-251
Datasheet
IPU13N03LAG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 8.3nC @ 5V
Max Input Capacitance 1043pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 12.8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package P-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069108-IPU13N03LAG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPU13N03LAG CAD Model

Description

The Infineon Technologies IPU13N03LAG is an N-Channel MOSFET transistor, designed for high current switching applications.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 30A
  • Rds(on): 12.8mOhm
  • Package: P-TO251-3
  • Packaging: Tube/rail
  • Popular choice for: Power supplies, motor control, and other high current applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 225 pieces
MOQ: 50 pcs
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