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IPU60R1K4C6AKMA1

Part No IPU60R1K4C6AKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO-251-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 90μA
Max Gate Charge 9.4nC @ 10V
Max Input Capacitance 200pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 28.4W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1046103-IPU60R1K4C6AKMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPU60R1K4C6AKMA1 CAD Model

Description

The supply and demand status is sufficient.

  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (Max): 28.4W (Tc)
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Case / Package: PG-TO251
  • Dimension: TO-251-3 Short Leads, IPak, TO-251AA
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 3.2A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 90μA
  • Max Gate Charge: 9.4nC @ 10V
  • Max Input Capacitance: 200pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 1.4 Ohm @ 1.1A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5161 $59.3515
275+ $0.4236 $116.4900
425+ $0.4103 $174.3775
585+ $0.3970 $232.2450
755+ $0.3838 $289.7690
1,010+ $0.3441 $347.5410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 79,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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