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IPU60R950C6AKMA1

Part No IPU60R950C6AKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.4A TO251-3  /  N-Channel 600 V 4.4A (Tc) 37W (Tc) Through Hole PG-TO251-3
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C6
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V
Power Dissipation (Max) 37W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number IPU60R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001292888,ROCINFIPU60R950C6AKMA1,2156-IPU60R950C6AKMA1
Standard Package 1,500
Win Source Part Number 997197-IPU60R950C6AKMA1
Ultra Librarian 3D Model Ultra Librarian IPU60R950C6AKMA1 CAD Model

Description

The Infineon Technologies 997197-IPU60R950C6AKMA1 is a N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products, particularly in transistors - FETs, MOSFETs - Single category.

  • Series: CoolMOS™ C6
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 4.4A (Tc) @ 25°C
  • Maximum Rds On: 950mOhm @ 1.5A, 10V
  • Gate Charge (Qg): 13 nC @ 10 V
  • Input Capacitance (Ciss): 280 pF @ 100 V
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Power Dissipation (Max): 37W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)

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