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Same model may have multiple batches, images only for reference.
IPW60R330P6 Real Image
Same model may have multiple batches, images only for reference.

IPW60R330P6

Part No IPW60R330P6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPW60R330 - 600V COOLMOS N-CHANN
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 100 V
Power Dissipation (Max) 93W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 921365-IPW60R330P6
Ultra Librarian 3D Model Ultra Librarian IPW60R330P6 CAD Model

Description

The 921365-IPW60R330P6 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 12A @ 25°C
  • Rds On (Max): 330mOhm @ 4.5A and 10V
  • Mounting Type: Through-hole
  • Package: TO-247-3
  • Gate Charge (Qg): 22 nC @ 10V
  • Input Capacitance (Ciss): 1010 pF @ 100V
  • Operating Temperature Range: -55°C to 150°C
  • Status: Active

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28+ $12.4232 $347.8496
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