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IPW65R041CFD

Part No IPW65R041CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 650V 68.5A PG-TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 3.3mA
Max Gate Charge 300nC @ 10V
Max Input Capacitance 8400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 41 mOhm @ 33.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 085860-IPW65R041CFD
Family Name IPW65R041CFD
Introduction Date March 07, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPW65R041CFD CAD Model

Description

The Infineon Technologies IPW65R041CFD is a MOSFET integrated circuit (IC) designed for use in discrete semiconductor products.

  • Supply and Demand Status: Sufficient
  • Package: PG-TO247-3
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 68.5A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 3.3mA
  • Maximum Gate Charge: 300nC @ 10V
  • Maximum Input Capacitance: 8400pF @ 100V
  • Maximum Rds On: 41 mOhm @ Id,Vgs is 33.1A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.7359 $51.6231
19+ $5.3729 $102.0851
29+ $5.1914 $150.5506
42+ $4.8284 $202.7928
54+ $4.6469 $250.9326
68+ $4.4653 $303.6404
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,260 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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