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IPW65R080CFD

Part No IPW65R080CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 43.3A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1.76mA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 5030pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 391W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 17.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 017332-IPW65R080CFD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Communications & Networking, Computers & Computer Peripherals, Alternative Energy, LED Lighting
Ultra Librarian 3D Model Ultra Librarian IPW65R080CFD CAD Model

Description

The Infineon Technologies 017332-IPW65R080CFD is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 700V.

  • Continuous Drain Current: 43.3A (Tc) @ 25°C
  • Maximum Rds On: 80 mOhm @ 17.6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO247-3
  • Suitable for: Discrete Semiconductor Products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation: 391W (Tc)
  • Supply and Demand Status: Limited
  • Commonly used in: Communications & Networking, Computers & Computer Peripherals, Alternative Energy, LED Lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.5898 $50.2572
34+ $2.9455 $100.1470
53+ $2.8534 $151.2302
73+ $2.7614 $201.5822
94+ $2.6693 $250.9142
126+ $2.3932 $301.5432
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,750 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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