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IPW65R190CFDAFKSA1

Part No IPW65R190CFDAFKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 17.5A TO247-3  /  N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
Power Dissipation (Max) 151W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW65R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names INFINFIPW65R190CFDAFKSA1,2156-IPW65R190CFDAFKSA1,SP000928268
Standard Package 240
Win Source Part Number 1220704-IPW65R190CFDAFKSA1
Ultra Librarian 3D Model Ultra Librarian IPW65R190CFDAFKSA1 CAD Model

Description

The Infineon Technologies IPW65R190CFDAFKSA1 is a high-quality N-Channel MOSFET transistor that offers excellent performance and reliability.

  • Series: Automotive, AEC-Q101, CoolMOS™
  • Packaging: Tube
  • Maximum Drain-to-Source Voltage: 650V
  • Maximum Continuous Drain Current: 17.5A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2566 $62.5660
23+ $5.1340 $118.0820
35+ $4.9734 $174.0690
48+ $4.8129 $231.0192
63+ $4.6523 $293.0949
84+ $4.1719 $350.4396
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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