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Same model may have multiple batches, images only for reference.
IPW65R190E6 Real Image
Same model may have multiple batches, images only for reference.

IPW65R190E6

Part No IPW65R190E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 100 V
Power Dissipation (Max) 151W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Standard Package 160 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874901-IPW65R190E6
Ultra Librarian 3D Model Ultra Librarian IPW65R190E6 CAD Model

Description

The Infineon Technologies 874901-IPW65R190E6 is a N-channel MOSFET transistor from the CoolMOS™ series.

  • Vdss: 650 V
  • Id: 20.2A
  • Rds On: 190mOhm @ 7.3A and 10V
  • Package: Bulk
  • Standard Package: 160 pieces
  • Mounting: Through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0852 $62.5560
70+ $1.7109 $119.7630
105+ $1.6574 $174.0270
145+ $1.6040 $232.5800
190+ $1.5506 $294.6140
250+ $1.3902 $347.5500
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Availability: 2,160 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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