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Same model may have multiple batches, images only for reference.
IPW90R1K0C3FKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPW90R1K0C3FKSA1

Part No IPW90R1K0C3FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5.7A TO-247
Datasheet
IPW90R1K0C3FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 370μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 850pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 1046118-IPW90R1K0C3FKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPW90R1K0C3FKSA1 CAD Model

Description

The Infineon Technologies IPW90R1K0C3FKSA1 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Polarity: N-channel
  • Power Dissipation: 89W (Tc)
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current @ 25°C: 5.7A (Tc)
  • Maximum Rds On @ Id,Vgs: 1 Ohm @ 3.3A, 10V
  • Package: PG-TO247-3
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4280 $50.9880
51+ $1.9922 $101.6022
78+ $1.9300 $150.5400
108+ $1.8677 $201.7116
139+ $1.8055 $250.9645
186+ $1.6187 $301.0782
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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