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Same model may have multiple batches, images only for reference.
IRF1324PBF Real Image
Same model may have multiple batches, images only for reference.

IRF1324PBF

Part No IRF1324PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 195A TO220AB
Datasheet
IRF1324PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 7590pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 1.5 mOhm @ 195A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046401-IRF1324PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF1324PBF CAD Model

Description

The Infineon Technologies MOSFET is a high performance N-Channel power MOSFET designed for use in a variety of applications.

  • Maximum Power Dissipation: 300W (Tc)
  • Case/Package: TO-220AB
  • Drain-Source Breakdown Voltage: 24V
  • Continuous Drain Current: 195A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 240nC @ 10V
  • Maximum Rds On: 1.5 mOhm @ 195A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Product Category: Discrete Semiconductor Products
  • Product Status: Active
  • Mounting Type: Through Hole
  • Package: Tube/Rail

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