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Same model may have multiple batches, images only for reference.
IRF1405ZSPBF
Same model may have multiple batches, images only for reference.

IRF1405ZSPBF

Part No IRF1405ZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
IRF1405ZSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 4780pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069246-IRF1405ZSPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1405ZSPBF CAD Model

Description

The Infineon Technologies 069246-IRF1405ZSPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 75A (Tc).

  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4.9 mOhm @ 75A, 10V
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging: Tube/Rail
  • Mounting: SMD (SMT)

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