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Same model may have multiple batches, images only for reference.
IRF1902PBF
Same model may have multiple batches, images only for reference.

IRF1902PBF

Part No IRF1902PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.2A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 7.5nC @ 4.5V
Max Input Capacitance 310pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 107463-IRF1902PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1902PBF CAD Model

Description

The Infineon Technologies IRF1902PBF is an obsolete N-channel MOSFET transistor that was used in various applications.

  • Feature: high-performance transistor with a low on-state resistance
  • Compliance: RoHS
  • Maximum Gate-Source Voltage: ±12V

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