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Same model may have multiple batches, images only for reference.
IRF2903ZSTRLP Real Image
Same model may have multiple batches, images only for reference.

IRF2903ZSTRLP

Part No IRF2903ZSTRLP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A D2PAK
Datasheet
IRF2903ZSTRLP Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 6320pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 290W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046431-IRF2903ZSTRLP
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF2903ZSTRLP CAD Model

Description

The IRF2903ZSTRLP is a medium-popularity N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Package: D2PAK
  • Type: SMD
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Supply and Demand Status: Sufficient
  • Status: Not for new designs

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Availability: 110,200 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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