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Same model may have multiple batches, images only for reference.
IRFR4105PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR4105PBF

Part No IRFR4105PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 27A DPAK
Datasheet
IRFR4105PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047067-IRFR4105PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR4105PBF CAD Model

Description

The Infineon Technologies IRFR4105PBF is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation (Max): 68W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Case/Package: D-Pak
  • Mounting Style: Surface Mount
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 45 mOhm @ 16A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3685 $51.5900
295+ $0.3448 $101.7160
455+ $0.3329 $151.4695
650+ $0.3091 $200.9150
845+ $0.2972 $251.1340
1,055+ $0.2853 $300.9915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,830 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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