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IRF3703PBF

Part No IRF3703PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 210A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 209nC @ 10V
Max Input Capacitance 8250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 76A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069267-IRF3703PBF
Family Name IRF3703
Introduction Date February 02, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3703PBF CAD Model

Description

The Infineon Technologies 166661 is an N-channel MOSFET with a maximum drain-source breakdown voltage of 30V and a continuous drain current of 210A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 210A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 209nC @ 10V
  • Maximum Input Capacitance: 8250pF @ 25V
  • Maximum Rds On: 2.8 mOhm @ 76A, 10V
  • Power Dissipation: 3.8W (Ta), 230W (Tc)
  • Package: TO-220AB
  • Supply and Demand: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2285 $51.2555
55+ $1.8286 $100.5730
85+ $1.7714 $150.5690
117+ $1.7143 $200.5731
151+ $1.6571 $250.2221
202+ $1.4857 $300.1114
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,710 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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