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IRF3704STRLPBF

Part No IRF3704STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 77A D2PAK / Trans MOSFET N-CH 20V 77A 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1996pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 113984-IRF3704STRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 800
Family Name IRF3704
Introduction Date July 20, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF3704STRLPBF CAD Model

Description

The Infineon Technologies IRF3704STRLPBF is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 20V and a continuous drain current of 77A @ Tc.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 77A @ Tc
  • Power Dissipation: 87W (Tc)
  • Maximum Rds On: 9 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 19nC @ 4.5V
  • Maximum Input Capacitance: 1996pF @ 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Applications: power supplies, motor control, and lighting

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