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Same model may have multiple batches, images only for reference.
IRF3706STRRPBF
Same model may have multiple batches, images only for reference.

IRF3706STRRPBF

Part No IRF3706STRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 77A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040679-IRF3706STRRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRF3706STRRPBF CAD Model

Description

The Infineon Technologies IRF3706STRRPBF is a N-Channel MOSFET discrete semiconductor product with a maximum power dissipation of 88W (Tc) and a drain-source breakdown voltage of 20V.

  • Supply and Demand: limited
  • Status: discontinued

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.3897 $59.1176
20+ $6.0626 $121.2520
30+ $5.8732 $176.1960
41+ $5.6838 $233.0358
53+ $5.4943 $291.1979
71+ $4.9261 $349.7531
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Availability: 10,200 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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