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IRF3707STRRPBF

Part No IRF3707STRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 62A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1990pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046460-IRF3707STRRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRF3707STRRPBF CAD Model

Description

The Infineon Technologies IRF3707STRRPBF is a N-channel MOSFET electronic component.

  • Maximum Power Dissipation: 87W (Tc)
  • Package: D2PAK with TO-263-3, D2Pak (2 Leads + Tab), TO-263AB dimensions for surface-mounting
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 62A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 19nC @ 4.5V
  • Maximum Input Capacitance: 1990pF @ 15V
  • Maximum Rds On @ Id,Vgs: 12.5 mOhm @ 15A, 10V
  • Market Status: Open market
  • Supply and Demand: Limited
  • Quantity per Package: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.3312 $65.3184
16+ $7.6565 $122.5040
24+ $7.4174 $178.0176
33+ $7.1783 $236.8839
42+ $6.9392 $291.4464
56+ $6.2208 $348.3648
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,314 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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