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Same model may have multiple batches, images only for reference.
IRF3709PBF
Same model may have multiple batches, images only for reference.

IRF3709PBF

Part No IRF3709PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 90A TO-220AB
Datasheet
IRF3709PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 41nC @ 5V
Max Input Capacitance 2672pF @ 16V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069277-IRF3709PBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Communications & Networking, Industrial
Ultra Librarian 3D Model Ultra Librarian IRF3709PBF CAD Model

Description

The Infineon Technologies MOSFET is an N-channel transistor designed for use in various applications, including power management, communications, and networking.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 90A (Tc)
  • Rds On @ Id,Vgs: 9 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 41nC @ 5V
  • Max Input Capacitance: 2672pF @ 16V
  • Power Dissipation (Max): 3.1W (Ta), 120W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1102 $61.0610
130+ $0.9110 $118.4300
200+ $0.8826 $176.5200
275+ $0.8540 $234.8500
350+ $0.8256 $288.9600
470+ $0.7401 $347.8470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 297 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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