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Same model may have multiple batches, images only for reference.
IRF3709ZCL
Same model may have multiple batches, images only for reference.

IRF3709ZCL

Part No IRF3709ZCL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 87A TO-262
Datasheet
IRF3709ZCL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2130pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 134644-IRF3709ZCL
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Communications & Networking, Industrial
Ultra Librarian 3D Model Ultra Librarian IRF3709ZCL CAD Model

Description

The Infineon Technologies MOSFET, part number IRF3709ZCL, is a through-hole mounting type electronic component with a maximum power dissipation of 79W (Tc).

  • Maximum Power Dissipation: 79W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Drive Voltage: 4.5V and 10V
  • Maximum Rds On: 6.3 mOhm @ 21A, 10V
  • Input Capacitance: 2130pF @ 15V
  • Gate Charge: 26nC @ 4.5V
  • Operating Temperature Range: -55°C to 175°C (TJ)

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