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Same model may have multiple batches, images only for reference.
IRF3709ZCSTRL Real Image
Same model may have multiple batches, images only for reference.

IRF3709ZCSTRL

Part No IRF3709ZCSTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 87A D2PAK
Datasheet
IRF3709ZCSTRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2130pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046478-IRF3709ZCSTRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3709ZCSTRL CAD Model

Description

The Infineon Technologies IRF3709ZCSTRL MOSFET is a high-performance device that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 87A @ 25°C
  • Polarity Type: N-channel
  • Maximum Power Dissipation: 79W (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 26nC @ 4.5V
  • Maximum Rds On: 6.3 mOhm @ 21A, 10V
  • Package: D2PAK
  • Lifecycle Status: Obsolete (EOL)

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