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Same model may have multiple batches, images only for reference.
IRF3710LPBF
Same model may have multiple batches, images only for reference.

IRF3710LPBF

Part No IRF3710LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 57A TO-262
Datasheet
IRF3710LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 3130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 28A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040681-IRF3710LPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3710LPBF CAD Model

Description

The Infineon Technologies IRF3710LPBF is a N-channel MOSFET with a maximum power dissipation of 200W (Tc).

  • Maximum Power Dissipation: 200W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On @ Id,Vgs: 23 mOhm @ 28A, 10V

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46+ $2.1744 $100.0224
72+ $2.1064 $151.6608
99+ $2.0385 $201.8115
127+ $1.9705 $250.2535
170+ $1.7667 $300.3390
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Availability: 15,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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