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Same model may have multiple batches, images only for reference.
IRF3710LPBF
Same model may have multiple batches, images only for reference.

IRF3710LPBF

Part No IRF3710LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 57A TO-262
Datasheet
IRF3710LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 3130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 28A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040681-IRF3710LPBF
Popularity Medium
Supply and Demand Status Limited

Description

The Infineon Technologies IRF3710LPBF is a N-channel MOSFET with a maximum power dissipation of 200W (Tc). Its supply and demand status is limited. This product is packed in a tube/rail and mounted through a hole. It has a drive voltage of 10V and a drain-source breakdown voltage of 100V. Its maximum Rds On at Id,Vgs is 23 mOhm @ 28A, 10V.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
60+ $0.8740 $52.4400
140+ $0.7170 $100.3800
220+ $0.6950 $152.9000
300+ $0.6720 $201.6000
385+ $0.6500 $250.2500
515+ $0.5830 $300.2450
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 6,340 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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