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Same model may have multiple batches, images only for reference.
IRF3711ZCS Real Image
Same model may have multiple batches, images only for reference.

IRF3711ZCS

Part No IRF3711ZCS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 92A D2PAK
Datasheet
IRF3711ZCS Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.45V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 2150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046487-IRF3711ZCS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3711ZCS CAD Model

Description

The Infineon Technologies IRF3711ZCS is an N-Channel MOSFET transistor in a D2PAK package.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 92A @ 25°C
  • Maximum Rds On: 6 mOhm @ 15A, 10V
  • Maximum Gate Charge: 24nC @ 4.5V
  • Status: Obsolete
  • Suitable for: Discrete semiconductor products

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