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IRF4104SPBF

Part No IRF4104SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 40V 120A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 40V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 015761-IRF4104SPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRF4104S
Introduction Date July 02, 2004
ECCN EAR99
Country of Origin China, Mexico, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IRF4104SPBF CAD Model

Description

The Infineon Technologies IRF4104SPBF is a N-channel MOSFET transistor that can handle a power dissipation of up to 140W (Tc).

  • Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 100nC @ 10V
  • Maximum Rds On @ Id,Vgs: 5.5 mOhm @ 75A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7544 $52.6320
70+ $1.4395 $100.7650
110+ $1.3945 $153.3950
150+ $1.3495 $202.4250
195+ $1.3045 $254.3775
260+ $1.1696 $304.0960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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