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SPA11N80C3

Part No SPA11N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 11A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 680μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 1600pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 7.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 030741-SPA11N80C3
Family Name SPA11N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA11N80C3 CAD Model

Description

The Infineon Technologies SPA11N80C3 is an N-channel MOSFET designed for discrete semiconductor products.

  • Polarity: Sensitive
  • Drain-Source Breakdown Voltage: 800V
  • Power Dissipation: 34W
  • Continuous Drain Current @ 25°C: 11A
  • Gate-Source Threshold Voltage: 3.9V @ 680μA
  • Maximum Gate Charge: 85nC @ 10V
  • Mounting Package: Through-hole
  • Operating Temperature Range: -55°C to 150°C
  • Compliance: Halogen-free regulations
  • Status: Limited supply

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.3960 $50.9400
36+ $2.7865 $100.3140
56+ $2.6994 $151.1664
77+ $2.6124 $201.1548
99+ $2.5253 $250.0047
133+ $2.2640 $301.1120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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