The Infineon Technologies IRF5210 is a surface-mount P-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 38A @ 25°C.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 38A @ 25°C
• Power Dissipation: 3.1W (Ta), 170W (Tc)
• Rds On: 60 mOhm @ 38A, 10V
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 230nC @ 10V
• Maximum Input Capacitance: 2780pF @ 25V
• Maximum Gate-Source Voltage: ±20V
• Package: D2PAK case
• Applications: Audio and industrial applications
• Usage: Common-used part
• Popularity: high