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Same model may have multiple batches, images only for reference.
IRF5M5210SCX
Same model may have multiple batches, images only for reference.

IRF5M5210SCX

Part No IRF5M5210SCX
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) -21 A
Drain to Source Breakdown Voltage -100 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
On-State Resistance 100 mΩ
Packaging Bulk
Power Dissipation 125 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1016579-IRF5M5210SCX
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5M5210SCX CAD Model

Description

The Infineon Technologies 1016579-IRF5M5210SCX is a single IGBT transistor that can withstand a maximum power dissipation of 125W.

  • Power Dissipation: 125W (Maximum)
  • Drain to Source Breakdown Voltage: -100V
  • Gate to Source Voltage: 20V
  • Continuous Drain Current: -21A
  • On-State Resistance: 100mΩ
  • Mounting Type: Through-Hole
  • RoHS: Compliant
  • ECCN: EAR99
  • MSL Level: Not Applicable

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