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Same model may have multiple batches, images only for reference.
IRF5NJ5305SCX
Same model may have multiple batches, images only for reference.

IRF5NJ5305SCX

Part No IRF5NJ5305SCX
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package SMD/SMT
Continuous Drain Current (ID) -16 A
Drain to Source Breakdown Voltage -55 V
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
On-State Resistance 100 mΩ
Power Dissipation 75 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1214621-IRF5NJ5305SCX
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5NJ5305SCX CAD Model

Description

The Infineon Technologies IRF5NJ5305SCX is a transistor that is designed for RF applications.

  • Power Dissipation: 75 W
  • Maximum Continuous Drain Current: -16 A
  • Mounting Type: Surface mount
  • RoHS Compliant: Yes

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1+ $241.6667 $241.6667
2+ $216.6667 $433.3334
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