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Same model may have multiple batches, images only for reference.
IRF6215L
Same model may have multiple batches, images only for reference.

IRF6215L

Part No IRF6215L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 13A TO-262
Datasheet
IRF6215L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 133912-IRF6215L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6215L CAD Model

Description

The Infineon Technologies IRF6215L is a P-Channel MOSFET transistor that is designed for use in a range of applications, including power management and switching circuits.

  • Maximum Power Dissipation: 3.8W @ Ta and 110W @ Tc
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 290 mOhm @ 6.6A and 10V
  • Package: TO-262
  • Mounting: Through-hole
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8768 $65.6880
80+ $1.5400 $123.2000
120+ $1.4918 $179.0160
160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
280+ $1.2513 $350.3640
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