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Same model may have multiple batches, images only for reference.
IRF6612TR1PBF
Same model may have multiple batches, images only for reference.

IRF6612TR1PBF

Part No IRF6612TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Ta), 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 45nC @ 4.5V
Max Input Capacitance 3970pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 24A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 118278-IRF6612TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6612TR1PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance electronic component with a N-Channel polarity.

  • Application: Discrete semiconductor products
  • Drive Voltage: 4.5V, 10V
  • Power Dissipation: 2.8W (Ta), 89W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Package: DIRECTFET MX
  • Dimension: DirectFET Isometric MX
  • Maximum Rds On at Id, Vgs: 3.3 mOhm @ 24A, 10V
  • Temperature Range: -40°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 45nC @ 4.5V
  • Maximum Input Capacitance: 3970pF @ 15V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
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230+ $0.5094 $117.1620
355+ $0.4932 $175.0860
485+ $0.4770 $231.3450
625+ $0.4620 $288.7500
840+ $0.4135 $347.3400
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Availability: 48,340 pieces
MOQ: 95 pcs
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