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Same model may have multiple batches, images only for reference.
IRF6617TR1
Same model may have multiple batches, images only for reference.

IRF6617TR1

Part No IRF6617TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A DIRECTFET
Datasheet
IRF6617TR1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 8.1 mOhm @ 15A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET ST
Dimension DirectFET Isometric ST
Win Source Part Number 109854-IRF6617TR1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6617TR1 CAD Model

Description

The Infineon Technologies IRF6617TR1 is an N-Channel MOSFET transistor that is designed for use in a range of applications, including power management and switching circuits.

  • Maximum Power Dissipation: 2.1W at Ta and 42W at Tc
  • Continuous Drain Current: 14A at Ta and 55A at Tc
  • Gate-Source Threshold Voltage: 2.35V @ 250μA
  • Maximum Rds On: 8.1 mOhm @ 15A and 10V
  • Package: DIRECTFET ST case
  • Mounting Technology: Surface-mount technology (SMT) mounting
  • Supply and Demand Status: Currently balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
555+ $0.1046 $58.0530
1,350+ $0.0859 $115.9650
2,085+ $0.0832 $173.4720
2,870+ $0.0805 $231.0350
3,715+ $0.0778 $289.0270
4,970+ $0.0698 $346.9060
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Availability: 5,000 pieces
MOQ: 555 pcs
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