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IRF6645TRPBF

Part No IRF6645TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.7A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 50μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 890pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 5.7A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SJ
Dimension DirectFET Isometric SJ
Win Source Part Number 1046559-IRF6645TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF6645TRPBF CAD Model

Description

The Infineon Technologies MOSFET IRF6645TRPBF is a N-Channel polarity device that comes in a DirectFET SJ package.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 5.7A @ 25°C
  • Input Capacitance: 890pF @ 25V
  • Rds On: 35 mOhm @ 5.7A, 10V
  • Status: active
  • Temperature Range: -40°C to 150°C (TJ)
  • Supply and Demand: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81,640 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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