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Same model may have multiple batches, images only for reference.
IRF6662TRPBF
Same model may have multiple batches, images only for reference.

IRF6662TRPBF

Part No IRF6662TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.3A DIRECTFET
Datasheet
IRF6662TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 8.2A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MZ
Dimension DirectFET Isometric MZ
Win Source Part Number 069325-IRF6662TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6662TRPBF CAD Model

Description

The Infineon Technologies IRF6662TRPBF is an N-channel MOSFET that is designed to be used in discrete semiconductor products.

  • Maximum Power Dissipation: 2.8W (Ta), 89W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 8.3A (Ta), 47A (Tc)
  • Gate-Source Threshold Voltage: 4.9V @ 100μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 8.2A, 10V
  • Package: packaged in a DirectFET MZ
  • Mounting: mounted using SMD (SMT) technology
  • Status: active
  • Temperature Range: -40°C to 150°C (TJ)

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