IRF6709S2TR1PBF

Part No IRF6709S2TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 12A DIRECTFET-S1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 12A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 1010pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 21W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET S1
Dimension DirectFET Isometric S1
Win Source Part Number 1046560-IRF6709S2TR1PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs

Description

The Infineon Technologies IRF6709S2TR1PBF is an obsolete (EOL) N-channel MOSFET transistor that is packaged in a DirectFET S1 case. The high power dissipation transistor has a maximum power dissipation of 1.8W (Ta), 21W (Tc) and is suitable for a range of applications that require high power handling. It has a high continuous drain current at 25°C of 12A (Ta), 39A (Tc) and is a reliable and efficient component for electronic circuits.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
45+ $1.1669 $52.5105
105+ $0.9575 $100.5375
165+ $0.9276 $153.0540
225+ $0.8977 $201.9825
290+ $0.8677 $251.6330
390+ $0.7780 $303.4200
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 8,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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