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Same model may have multiple batches, images only for reference.
IRF6713STRPBF
Same model may have multiple batches, images only for reference.

IRF6713STRPBF

Part No IRF6713STRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 22A DIRECTFET-SQ
Datasheet
IRF6713STRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 22A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 50μA
Max Gate Charge 32nC @ 4.5V
Max Input Capacitance 2880pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 22A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SQ
Dimension DirectFET Isometric SQ
Win Source Part Number 069331-IRF6713STRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6713STRPBF CAD Model

Description

The IRF6713STRPBF is a N-Channel MOSFET transistor from Infineon Technologies with a DirectFET SQ case/package.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 22A (Ta), 95A (Tc)
  • Max Rds On at Id,Vgs: 3 mOhm @ 22A, 10V
  • Gate-Source Threshold Voltage: 2.4V @ 50μA
  • Max Gate Charge: 32nC @ 4.5V
  • Max Input Capacitance: 2880pF @ 13V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete(EOL)
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0443 $62.6580
120+ $0.9769 $117.2280
185+ $0.9433 $174.5105
265+ $0.8759 $232.1135
345+ $0.8422 $290.5590
430+ $0.8085 $347.6550
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Availability: 14,710 pieces
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