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Same model may have multiple batches, images only for reference.
IRF6811STRPBF
Same model may have multiple batches, images only for reference.

IRF6811STRPBF

Part No IRF6811STRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 25V 19A DIRECTFET
Datasheet
IRF6811STRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 19A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 35μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1590pF @ 13V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.1W (Ta), 32W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 19A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SQ
Dimension DirectFET Isometric SQ
Win Source Part Number 017482-IRF6811STRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF6811S
Introduction Date January 28, 2011
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IRF6811STRPBF CAD Model

Description

The IRF6811STRPBF is a MOSFET transistor from Infineon Technologies that is widely used in discrete semiconductor products.

  • Transistor Type: N-channel
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 19A (Ta), 74A (Tc) @ 25°C
  • Polarity: N-channel
  • Maximum Power Dissipation: 2.1W (Ta), 32W (Tc)
  • Gate-Source Threshold Voltage: 2.1V @ 35μA
  • Maximum Gate Charge: 17nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 3.7 mOhm @ 19A, 10V
  • Mounted on: a DirectFET SQ package
  • Dimension: DirectFET Isometric SQ
  • Halogen-free regulations: compliant
  • Market Popularity: high

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