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Same model may have multiple batches, images only for reference.
IRF7210PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7210PBF

Part No IRF7210PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 16A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 500μA
Max Gate Charge 212nC @ 5V
Max Input Capacitance 17179pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 7 mOhm @ 16A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 133487-IRF7210PBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7210PBF CAD Model

Description

The Infineon Technologies 133487-IRF7210PBF is a P-channel MOSFET transistor that comes in an 8-SO package.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 16A @ 25°C
  • Maximum Rds On at Id,Vgs: 7 mOhm @ 16A, 4.5V
  • Gate-Source Threshold Voltage: 600mV @ 500μA
  • Maximum Gate Charge: 212nC @ 5V
  • Maximum Input Capacitance: 17179pF @ 10V
  • Maximum Gate-Source Voltage: ±12V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited
  • Alternative Parts Available: IRF7210TRPBF, IRF7210TR, IRF7210, and IRF7210PBF

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Quantity Unit Price Ext. Price
60+ $0.8667 $52.0020
145+ $0.7112 $103.1240
220+ $0.6889 $151.5580
300+ $0.6667 $200.0100
390+ $0.6445 $251.3550
520+ $0.5778 $300.4560
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