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Same model may have multiple batches, images only for reference.
IRF7317TRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7317TRPBF

Part No IRF7317TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8-SOIC
Datasheet
IRF7317TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.6A, 5.3A
Maximum Rds On at Id,Vgs 29 mOhm @ 6A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 900pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017504-IRF7317TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7317TRPBF CAD Model

Description

The Infineon Technologies IRF7317TRPBF is an N and P-Channel MOSFET that features a logic level gate.

  • Package: 8-SO package
  • Suitable for use in: Discrete semiconductor products
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6.6A and 5.3A @ 25°C
  • Maximum Power Dissipation: 2W
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 27nC @ 4.5V
  • Maximum Input Capacitance: 900pF @ 15V
  • Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 4.5V
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
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