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IRF7319TRPBF Infineon Technologies IRF7319TRPBF real image273
Same model may have multiple batches, images only for reference.
IRF7319TRPBF Infineon Technologies IRF7319TRPBF real image273
IRF7319TRPBF Infineon Technologies IRF7319TRPBF real image273
Same model may have multiple batches, images only for reference.

IRF7319TRPBF

Part No IRF7319TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8SOIC
Datasheet
IRF7319TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 29 mOhm @ 5.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 069355-IRF7319TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7319TRPBF CAD Model

Description

The Infineon Technologies 069355-IRF7319TRPBF is a N and P-Channel FET with a drain-source breakdown voltage of 30V.

  • Maximum Rds On at Id,Vgs: 29 mOhm @ 5.8A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Power Dissipation: 2W
  • Technology: SMD (SMT)
  • Ideal for: Discrete semiconductor products
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4990 $52.3950
215+ $0.4674 $100.4910
335+ $0.4516 $151.2860
480+ $0.4200 $201.6000
620+ $0.4043 $250.6660
775+ $0.3885 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,630 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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