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IRF7343TRPBF

Part No IRF7343TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 55V 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 4.7A, 3.4A
Maximum Rds On at Id,Vgs 50 mOhm @ 4.7A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 740pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017513-IRF7343TRPBF
Family Name IRF7343
Introduction Date February 24, 1999
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7343TRPBF CAD Model

Description

The Infineon Technologies 017513-IRF7343TRPBF is a standard N and P-Channel MOSFET that is commonly used in various electronic applications.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 4.7A, 3.4A @ 25°C
  • Maximum Rds On: 50 mOhm @ 4.7A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Input Capacitance: 740pF @ 25V
  • Package: 8-SO
  • Mounting Technology: SMD (SMT) technology
  • Supply: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2788 $50.1840
385+ $0.2612 $100.5620
595+ $0.2524 $150.1780
855+ $0.2347 $200.6685
1,110+ $0.2259 $250.7490
1,385+ $0.2171 $300.6835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 43,870 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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