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Same model may have multiple batches, images only for reference.
IRF7380QTRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7380QTRPBF

Part No IRF7380QTRPBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET 2N-CH 80V 3.6A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 3.6A
Rds On (Maximum) at Id, Vgs 73mOhm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 23nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 660pF at 25V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7380QPBF
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 738788-IRF7380QTRPBF
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7380QTRPBF CAD Model

Description

The IRF7380QTRPBF is a dual N-channel logic level gate FET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 3.6A
  • Maximum Power: 2W
  • Package: 8-SOIC
  • Popularity: low popularity
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 23nC @ 10V
  • Input Capacitance: 660pF @ 25V
  • Rds On (Maximum) @ Id, Vgs: 73mOhm @ 2.2A, 10V
  • Status: obsolete
  • Supply and demand status: balanced

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