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Same model may have multiple batches, images only for reference.
IRF7413GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7413GTRPBF

Part No IRF7413GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8-SOIC
Datasheet
IRF7413GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 79nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 7.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046637-IRF7413GTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7413GTRPBF CAD Model

Description

The Infineon Technologies IRF7413GTRPBF is an N-Channel MOSFET that is designed to deliver high performance in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 79nC @ 10V
  • Maximum Rds On @ Id,Vgs: 11 mOhm @ 7.3A, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: SMD (SMT)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
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515+ $0.6734 $346.8010
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