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Same model may have multiple batches, images only for reference.
IRF7421D1PBF
Same model may have multiple batches, images only for reference.

IRF7421D1PBF

Part No IRF7421D1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.8A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 4.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 100276-IRF7421D1PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7421D1PBF CAD Model

Description

The Infineon Technologies IRF7421D1PBF is a N-Channel MOSFET with Schottky Diode (Isolated) feature, which is widely used in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.8A @ 25°C
  • Power Dissipation: 2W (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 27nC @ 10V
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 4.1A, 10V
  • Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: medium-popularity
  • Supply and Demand Status: sufficient
  • Estimated EOL date: not available
  • Quantity per Package: 95

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