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Same model may have multiple batches, images only for reference.
IRF7453TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7453TRPBF

Part No IRF7453TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 2.2A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 930pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 230 mOhm @ 1.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046647-IRF7453TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7453TRPBF CAD Model

Description

The Infineon Technologies IRF7453TRPBF is a N-Channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 2.2A (Ta)
  • Package: 8-SO
  • Maximum Power Dissipation: 2.5W (Ta)
  • Input Capacitance: 930pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Product Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced

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135+ $1.2982 $175.2570
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