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IRF7473TRPBF

Part No IRF7473TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 6.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 61nC @ 10V
Max Input Capacitance 3180pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 26 mOhm @ 4.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001876-IRF7473TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7473TRPBF CAD Model

Description

The Infineon Technologies IRF7473TRPBF is a N-Channel MOSFET with a reel - TR packaging suitable for SMD (SMT) mounting.

  • Power Dissipation (Max): 2.5W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.9A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 61nC @ 10V
  • Maximum Input Capacitance: 3180pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 26 mOhm @ 4.1A, 10V
  • Supply and Demand Status: Limited
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,130 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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