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Same model may have multiple batches, images only for reference.
IRF7492TRPBF
Same model may have multiple batches, images only for reference.

IRF7492TRPBF

Part No IRF7492TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.7A 8-SOIC
Datasheet
IRF7492TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 79 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001885-IRF7492TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7492TRPBF CAD Model

Description

The IRF7492TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies.

  • Popularity: Popular product with a high demand
  • Device Type: Discrete semiconductor products
  • Power Dissipation: 2.5W
  • Status: Obsolete (EOL)
  • Maximum Gate Charge: 59nC @ 10V
  • Maximum Input Capacitance: 1820pF @ 25V

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Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
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Availability: 300 pieces
MOQ: 50 pcs
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