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Same model may have multiple batches, images only for reference.
IRF7521D1TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7521D1TRPBF

Part No IRF7521D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.4A MICRO8
Datasheet
IRF7521D1TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8nC @ 4.5V
Max Input Capacitance 260pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 135 mOhm @ 1.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 1046676-IRF7521D1TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7521D1TRPBF CAD Model

Description

The Infineon Technologies IRF7521D1TRPBF is a N-Channel MOSFET with a Schottky diode designed for use in various electronic circuits.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.4A @ 25°C
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 8nC @ 4.5V
  • Maximum Input Capacitance: 260pF @ 15V
  • Maximum Rds On: 135 mOhm @ 1.7A @ 4.5V
  • Package: Micro8
  • Mounting: SMD (SMT)

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