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Same model may have multiple batches, images only for reference.
IRF7523D1TR Real Image
Same model may have multiple batches, images only for reference.

IRF7523D1TR

Part No IRF7523D1TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.7A MICRO8
Datasheet
IRF7523D1TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 210pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 130 mOhm @ 1.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 1046677-IRF7523D1TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7523D1TR CAD Model

Description

The Infineon Technologies IRF7523D1TR is an N-channel MOSFET device with a Schottky diode (isolated) feature.

  • Supply and Demand Status: Balanced
  • Status: Obsolete (EOL)
  • Package: Micro8
  • Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.7A (Ta) @ 25°C
  • Maximum Rds On @ Id, Vgs: 130 mOhm @ 1.7A, 10V
  • Maximum Gate-Source Voltage: ±20V

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