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IRF7523D1TRPBF

Part No IRF7523D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.7A MICRO8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 210pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 130 mOhm @ 1.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 1046678-IRF7523D1TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7523D1TRPBF CAD Model

Description

The Infineon Technologies 1046678-IRF7523D1TRPBF is a N-Channel MOSFET with a Schottky Diode (Isolated) feature.

  • Maximum Power Dissipation: 1.25W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.7A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 210pF @ 25V
  • Maximum Rds On: 130 mOhm @ 1.7A, 10V
  • Package: Micro8
  • Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3564 $58.8060
395+ $0.2926 $115.5770
615+ $0.2834 $174.2910
845+ $0.2742 $231.6990
1,090+ $0.2651 $288.9590
1,460+ $0.2377 $347.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,200 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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